肖特基二极管
| Symbol | Parameter | 中文翻译 |
| VRRM | Peak repetitive reverse voltage | 反向重复峰值电压 |
| VRWM | Working peak reverse voltage | 反向工作峰值电压 |
| VR | DC Blocking Voltage | 反向直流电压 |
| VR(RMS) | RMS Reverse Voltage | 反向电压有效值 |
| IF(AV) | Average Rectified Forward Current | 正向平均电流 |
| IR | Reverse Current | 反向电流 |
| IFSM | Non-Repetitive Peak Forward Surge Current | 浪涌电流 |
| VF | Forward Voltage | 正向直流电压 |
| Cj | Typical Junction Capactiance | 结电容 |
| PD | Power Dissipation | 耗散功率 |
| Tj | Operating Junction Temperature | 工作结温 |
| Tstg | Storage Temperature Range | 存储温度 |
| Rth(j-a) | Thermal Resistance from Junction to Ambient | 结到环境的热阻 |
二极管
| Symbol | Parameter | 中文翻译 |
| VR | Continuous reverse voltage | 反向直流电压 |
| IF | Continuous forward current | 正向直流电流 |
| VF | Forward voltage | 正向电压 |
| IR | Reverse current | 反向电流 |
| Cd | diode capacitance | 二极管电容 |
| Rd | diode forward resistance | 二极管正向电阻 |
| Ptot | total power dissipation | 功率总损耗 |
| Tj | Junction Temperature | 结温 |
| Tstg | storage temperature | 存储温度 |
TVS管
| Symbol | Parameter | 中文翻译 |
| IPP | Maximum reverse peak pulse current | 峰值脉冲电流 |
| VC | Clampling voltage | 钳位电压 |
| IR | Maximum reverse leakage current | 最大反向漏电流 |
| V(BR) | Breakdown voltage | 击穿电压 |
| VRWM | Working peak reverse voltage | 反向工作峰值电压 |
| VF | Forward voltage | 正向电压 |
| IF | Forward current | 正向电流 |
| IT | Test current | 测试电流 |
可控硅
| Symbol | Parameter | 中文翻译 |
| VDRM | Peak repetitive off-state voltage | 断态重复峰值电压 |
| VRRM | Peak repetitive reverse voltage | 反向重复峰值电压 |
| IT(RMS) | RMS On-state current | 额定通态电流 |
| ITSM | Non repetitive surge peak on-state current | 通态非重复浪涌电流 |
| IGM | Forward peak gate current | 控制极重复峰值电流 |
| VTM | peak forward on-state voltage | 通态峰值电压 |
| IGT | Gate trigger current | 控制极触发直流电流 |
| VGT | Gate trigger voltage | 控制极触发电压 |
| IH | Holding current | 维持电流 |
| IDRM | Peak repetitive off-state current | 断态重复峰值电流 |
| IRRM | Peak repetitive reverse current | 反向重复峰值电流 |
| PG(AV) | Average gate power dissipation | 控制极平均功率 |
| Tj | operating junction temperature range | 工作结温 |
| Tstg | storage temperature range | 存储温度 |
稳压管
| Symbol | Parameter | 中文翻译 |
| VI | input voltage | 输入电压 |
| Vo | output voltage | 输出电压 |
| ΔVo | Load regulation | 输出调整率 |
| ΔVo | Line regulation | 输入调整率 |
| Iq | quiescent current | 偏置电流 |
| ΔIq | quiescent current change | 偏置电流变化量 |
| VN | Output noise voltage | 输出噪声电压 |
| RR | Ripple rejection | 纹波抑制比 |
| Vd | dropout voltage | 降落电压 |
| Isc | short circuit current | 短路输出电流 |
| Ipk | peak current | 峰值输出电流 |
| Topr | operating junction temperature range | 结温 |
| Tstg | storage temperature range | 存储温度 |
43系列基准源
| Symbol | Parameter | 中文翻译 |
| VKA | Cathode voltage | 阴极电压 |
| IK | Cathode current range(continous) | 阴极电流 |
| Iref | Reference input current range，continous | 基准输入电流 |
| PD | Power dissipation | 耗散功率 |
| Rth(j-a) | Thermal resistance from junction to ambient | 结到环境的热阻 |
| Topr | operating junction temperature range | 工作结温 |
| Tstg | storage temperature range | 存储温度 |
| Vref | Reference input voltage | 基准输入电压 |
| ΔVref(dev) | Deviation of reference input voltage over full temperature range | 全温度范围内基准输入电压的偏差 |
| ΔVref/ΔVKA | Ratio of change in reference input voltage to the change in cathode voltage | 基准输入电压变化量与阴极电压变化量的比 |
| ΔIref(dev) | Deviation of reference input current over full temperature range | 全温度范围内基准输入电流的偏差 |
| Imin | Minimum cathode current for regulation | 稳压时最小负极电流 |
| Ioff | off-state cathode current | 关断状态阴极电流 |
| |ZKA| | Dynamic impedance | 动态阻抗 |
普通晶体管
| Symbol | Parameter | 中文翻译 |
| VCBO | Collector-Base voltage | 发射极开路，集电极-基极电压 |
| VCEO | Collector-emitter voltage | 基极开路，集电极-发射极电压 |
| VEBO | Emitter-base voltage | 集电极开路，发射极-基极电压 |
| IC | Collector current | 集电极电流 |
| PC | Collector power dissipation | 集电极耗散功率 |
| Tj | Junction temperature | 结温 |
| Tstg | storage temperature | 存储温度 |
| V(BR)CBO | Collector-Base breakdown voltage | 发射极开路，集电极-基极反向电压 |
| V(BR)CEO | Collector-emitter breakdown voltage | 基极开路，集电极-发射极反向电压 |
| V(BR)EBO | Emitter-base breakdown voltage | 集电极开路，发射极-基极反向电压 |
| ICBO | Collector cut-off current | 发射极开路，集电极-基极截止电流 |
| IEBO | Emitter cut-off current | 集电极开路，发射极-基极截止电流 |
| ICEO | Collector cut-off current | 基极开路，集电极-发射极截止电流 |
| hFE | DC current gain | 共发射极正向电流传输比的静态值 |
| VCEsat | Collector-emitter saturation voltage | 集电极-发射极饱和电压 |
| VBEsat | Base-emitter saturation voltage | 基极-发射极饱和电压 |
| VBE | Base-emitter voltage | 基极-发射极电压 |
| fT | Transition frequency | 特征频率 |
| Cobo | Collector output capacitance | 共基极输出电容 |
| Cibo | Collector input capacitance | 共基极输入电容 |
| F | Noise figure | 噪声系数 |
| Ton | Turn-on time | 开通时间 |
| Toff | Turn-off time | 关断时间 |
| Tr | Rise time | 上升时间 |
| Ts | Storage time | 存储时间 |
| Tf | Fall time | 下降时间 |
| Td | Delay time | 延迟时间 |
MOS管
| Symbol | Parameter | 中文翻译 |
| ID | Continuous drain current | 漏极直流电流 |
| VGS | Gate-source voltage | 栅-源电压 |
| VDS | Drain-source voltage | 漏-源电压 |
| EAS | single pulse avalchane energy | 单脉冲雪崩击穿能量 |
| Rth(j-a) | Thermal resistance from junction to ambient | 结到环境的热阻 |
| Rth(j-c) | Thermal resistance from junction to case | 结到管壳的热阻 |
| V(BR)DSS | Drain-source breakdown voltage | 漏源击穿电压 |
| V(GS)th | Gate threshold voltage | 栅源阈值电压 |
| IGSS | Gate-body leakage current | 漏-源短路的栅极电流 |
| IDSS | Zero gate voltage drain current | 栅-源短路的漏极电流 |
| rDS(on) | Drain-source on-resistance | 漏源通态电阻 |
| gfs | Forward trans conductance | 跨导 |
| VSD | Diode forward voltage | 漏源间体内反并联二极管正向压降 |
| Ciss | Input capacitance | 栅-源电容 |
| Coss | Output capacitance | 漏-源电容 |
| Crss | Reverse transfer capacitance | 反向传输电容 |
| Rg | Gate resistance | 栅极电阻 |
| td(on) | Turn-on delay time | 开通延迟时间 |
| tr | Rise time | 上升时间 |
| td(off) | Turn-off delay time | 关断延迟时间 |
| tf | Fall time | 下降时间 |
| IDM | Pulsed drain current | 最大脉冲漏电流 |
| PD | Power dissipation | 耗散功率 |
| Tj | operating junction temperature range | 结温 |
| Tstg | storage temperature range | 存储温度 |
